Micro- and nanofabrication installations

You are here

A nationally ranked micro- and nanofabrication plant

With its 1400 m2 of cleanroom area, the MIMENTO (microfabrication for mechanics, nanosciences, thermics and optics) installations make its high-technology equipment available to both industry and to academics.

R & D studies are thus possible in micro-mechanics, micro-nano-optics and micro-nano-acoustics leading to the design and production of MEMS, MOEMS and NEMS devices.

The technological installations are equipped with a pilot line for industrial microfabrication (SAW/BAW and RF-MEMS components). The line is available for orders for prototypes, pre-production and development for numerous materials (silicium, quartz, niobate, etc.).

The BTR network: Since 2004 the MIMENTO installations have been a part of the national network of large technological facilities for basic technological research, the Renatech network supported by the BTR program.

From fundamental research to industrial activity

MIMENTO, the FEMTO-ST’s micro- and nanofabrication installations are comprised of three modules:RENATECH

  • Fundamental research in nanotechnology
  • Microfabrication in cleanrooms equipped with several complete production lines for micro-devices, in particular made from materials other than silicium
  • Industrial R & D and innovation: a pilot line for the fabrication of piezoelectric micro- and nano-components undertaken collectively in the institute’s pilot workshop

The Institute’s facilities

 

 

 

 Photolithography

Optical mask generator

Characteristics

Achievements

masqueur lithographie

Optical mask generator Heidelberg DWL 200

 
  • 4 and 5 inch Chromium/Glass optical masks
  • it defines microstructures directly on 3 to 6 inch wafers
  • maximum resolutions: 0.9µm for the 4mm writing head and 1.8µm for the 10mm one

Masque pour réalisation de peignes interdigitésMask

Coating machines

Characteristics

Achievements

tournette RC-8 KARLSUSSTournette RC-8 KARLSUSS
  • Maximum substrate size: 4 inch
  • Programming: up to 9 programs
  • Velocity: 10 to 5000rpm
  • Acceleration: 100 to 5000rpm/sec
  • Coating time: 1 to 999 seconds.
     
 
Spray coatingSpray coatingResins now used :
  • S 1813 : from 3 to 8 µm thick
  • SU-8 : from  8 to 20 µm thick
Spray coating

Aligners

Characteristics

Achievements

Aligneur Double Face EVG 620Double-side EVG 620 alignment system
  • Mask size: 3, 4 or 5 inch
  • Substrates: 2, 3 or 4 inch
  • Nominal lamp power: 13mW/cm2
  • Exposure method: time or constant energy,
  • Exposure modes: proximity, soft contact, hard contact or vacuum contact (vacuum chamber),
  • Alignment accuracy: 0.5µm (on top) 1µm (on bottom),

Theoretical resolution:

  • soft contact : < 2 µm,
  • hard contact : 0.8 to 1.5µm,
  • vacuum contact: 0.6 µm

 
 
Aligneur Simple Face SETSimple-side alignment system
  • Mask size: 3, 4 and 5 inch,
  • Useful opening: square sides: 60 and 76 mm,
  • Wafer holder: up to 4 inch,
  • Alignment microscope: monocular, magnification: 8 to 40,
  • Typical lighting power: 10 to 20mW/cm2,
  • Exposure modes: soft contact or vacuum contact with vacuum chamber
  • Resolution: smallest exposed and developed patterns: 1.5µm (in vacuum contact)
 

    Laminor

360/N Laminor (Rohm and Haas Electronic)

  
Résines photosensibles

Photoresists

  • negative resists: for example, SU-8 resist
  • positive resists: AZ9260 and S1813 resists
  • Image reversal resists: AZ5214, TI09XR
  • Particular resist for plasma etching
  • Particular resists for LIFT-OFF

Méthode LIFT-OFF
Méthode LIFT OFF

Top of page

Thin films deposition

Cathode sputtering

Characteristics

Pulvérisation DC : PLASSYS

DC sputtering: PLASSYS

  • Gas: argon;
  • cathode: three 4 inch DC magnetron sources with one reinforced magnetron adapted to nickel and one 6 inch DC magnetron source;
  • available targets: Al, Ti, Cr, Ni, Cu, Au, Nb, W, Pd, Pt, Mo;
  • DC supplying: 20mA to 1A (1 kW max. Power, intensity or voltage control);
  • substrate polarisations: ionic etching 20 to 250W (RF Generator HFS 500E), wafer holder: 4 samples up to 4 inch rotary and positionable;
  • no substrate heating; no charge lock;
  • pumping system: 2063 alcatel backing pump and Cryo Torr 8 CTI Cryogenics secondary pump.

 

Pulvérisation Réactive d'ALN : PLASSYS

Cathode reactive sputtering: PLASSYS

  • gas: argon, nitrogen;
  • cathode: 4 inch magnetron;
  • supplying: 1.5 kW in DC;
  • target: Al;
  • substrate polarisations: RF 300W max;
  • substrate holder: one sample up to 4 inch;
  • substrate heating: up to 800 °C;
  • charge lock;
  • secondary pump: cryogenic pump.
Pulvérisation Cathodique PLASSYS

PLASSYS Cathode sputtering

  • available targets: Ni, Cr, Au, Al, Ti, W, Cu;
  • cathodes: three 4 inch magnetron cathodes;
  • heating chuck;
  • Joule effect evaporation source
Pulvérisation AC450 DC/RF (Alliance Concept)

Alliance Concept AC450 DC/RF Sputtering

  • gas: argon, acetylene, nitrogen, oxygen and any other gas or gas mixture;
  • two 2 inch DC magnetron cathodes with one reinforced magnetron adapted to magnetic materials;
  • one 2 inch RF magnetron cathode;
  • two 2 inch DC magnetron cathodes in confocal position to deposit two materials simultaneously;
  • available targets: Al, Ti, Cr, Ni, Cu, Ag, Nb, W, V, Fe, Mo, B, Zr, Ta, Si, C, Co, NiTi, TiAl, SiO2, Ni2MnGa or any other target or alloy materials,
  • two DC supplying: 1.5 kW max.
  • Power, intensity, or voltage control.
  • Two RF supplying:(13.56 MHz) 300W;
  • substrate polarisation: DC or RF mode,
  • wafer holder: three inch rotary positionable polarisable and heating (up to 850ºC) holder,
  • fitted with an ion beam (microwaves 2.45GHz): ionic bombardment with argon ions whose energy reaches 2000eV,
  • pumping system: VARIAN 1002 Turbo VARIAN VT 1001 backing pump

PECVD

Characteristics

SI 500 D ICP Deposition System

SI 500 D ICP Deposition System

Deposition of silicon nitride, silicon oxynitride and silicon oxide
at low temperature by plasma deposition system

Specification of gases process : SiH4, NH3, O2, Ar
Vaccuum system : Pressure <10-6 mbar 
ICP source :

Pressure: 1 Pa ...20 Pa
Power: 100 ... 1200 W
Plasma density: up to 5*1011 cm-3

RF power supply : @13.56 MHz, 1200 W

 Top of page

Chemical etching

Chemical etching

Characteristics

Achievements

Paillasse d'usinage humideWet etching bench (KOH BHF)

  • solution used: potassium hydroxide KOH, H2O;
  • concentration: 41% in mass (10 moles/litre);
  • temperature: 55°C;
  • stirring: 300 rpm.

For quartz and SiO2, the solution used is buffered hydrofluoric acid (BHF).

Micro-accéléromètre
Microaccelerometer

Vapour HF Etch

Vapour HF Etching

  

Paillasse de Si poreuxPorous Si bench

  • 4 inch substrates;
  • a HF tank: silicon substrate anodization (hydrofluoric acid electrolysis),
  • two rinsing tanks (calcium carbonate water),
  • two DI water tanks with overflows and nitrogen bubbling for rinsing;
  • a diluted acetic acid tank to pull out carbonate particles lying on the substrate and the wafer holder,
  • an isopropanol tank.
 
Electroformage

Eletrolytic Microfabrication: Electroforming bench (Ni-Cu-Au)

  • substrate: metallic or metallized up to 5 inch;
  • deposited materials: nickel, copper, and gold by immersion;
  • electrolyte temperature: 50°C;
  • deposition velocity: some µm/h to a few tens µm/h;
  • thickness: limited by the resist mould thickness (generally a few tens microns);

Measured characteristics of the electroplated nickel:

  • Young modulus: 200Gpa;
  • hardness: 300 to 600Hv;
  • elasticity limit: 300Mpa;
  • roughness (Rt): 0.8 to 1.2µm;
  • intrinsic strain:
    • -30 to 20MPa on Cu,
    • 140 to 220MPa on Si.

micro-moteur
Micromotor

   

Top of page

Plasma Etching

Plasma Etching

Characteristics

Achievements

Bâti de gravure profonde DRIE, ALCATEL
Deep Reactive Ion Etching (DRIE) ALCATEL

Parameters that can be adjusted:

  • pressure (1 to 10Pa),
  • gas flow (50 to 500sccm),
  • wafer holder temperature,
  • RF source power (1000 to 2000W),
  • wafer holder power (up to 200 W),
  • SF6/C4F8 cycle time;

masks used:

  • resist,
  • silica,
  • metal (nickel, chromium, aluminium);

wafer holder specified for 4 inch wafers

Microactionneur électrostatique
electrostatic microactuator

RAPIER SPTS

Deep Reactive Ion Etching-ICP Silicium (RAPIER SPTS)

Si - Bosch Process 

Graveur RIE fluorée PLASSYS

Ionic Reactive Etching (RIE) with fluorinated chemistry: PLASSYS

  • RF power: 300W max;
  • gases: SF6, O2, CHF3, C2F6;
  • substrate: 4 inch max on a silica plate;
  • end-attack detector: laser interferometry;
  • etched materials: Si, SiO2, Si3N4, Quartz, Ti, LiNbO3
 
Bâti de gravure ICP-DRIE STS MPO 562

ICP-DRIE Etching machine STS MPO 562

Technical characteristics:

  • ICP Plasma source: 3kW RF
  • Bias source: 1.5 kW RF
  • Mechanical clamping with thermostated chuck from -20 to 80°C
  • Turbomolecular secondary pump (2000 l/s)
  • Sample sizes: from chips to 6 inch wafers
  • Available gases: SF6, CF4, C4F8, He, O2 et Ar


Etched materials: Silica SiO2, Silicon nitride Si3N4, Pyrex, Gallium ortho-phosphate GaPO4, Langasite LGS, Langatate LGT, Fused silica, Quartz, Lithium niobate LiNbO3, Lead titanate PbTiO3…

Gravure Quartz coupe AT d’une profondeur de 42µm avec une verticalité de flancs de 85°
Gravure Quartz coupe AT d’une profondeur de 42µm avec une verticalité de flancs de 85°

NANOPLAS

Decoating and surface treatment (NANOPLAS)

ICP source 

Top of page

Thermal processing

Thermal processing

Characteristics

Triple-tube oven

Triple-tube oven for oxidation and thermal treatments

Tub 1:

- Tube diameter: 20 cm
- Type of oxidation: Dry/Wet
- Oxidation temperature: 1000° - 1100°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen
 

Tube 2:

- Tube diameter: 17 cm
- Diffusion temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen
 

Tube 3:

- Tube diameter: 17 cm
- Annealing temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Argon and Nitrogen

  

Top of page

Nanotechnologies

Nanotechnologies

Characteristics

Achievements

Gravure par faisceaux d'ions focalisés (FIB)

Focused Ionic Beam etching: FIB, ORSAY PHYSICS

  • The etching velocity is a linear function of time and sample current.
  • It is about 0.1 µm3.nA-1.s-1.
  • The total field is limited at 300µm.
gravure FIB
  • Lithographie électronique Raith E_Line

    Electron beam lithography
    Raith E_Line

  • Filament : Schottky TFE
  • Stage displacement : 100mm x 100mm x 30mm
  • Spot size : <2nm @ 20keV
  • Curent range : 5pA – 20nA
  • Curent density : > 7500 A/cm²
  • Curent stability : <0 .5%/h
  • Detectors : In Lens, Everhart Thornley
  • Minimum line width : 20nm
  • Stitching accuracy : 60nm (mean 3 sigma)
  • Layer to layer adjustment accuracy : 40nm (mean 3 sigma)
  • Sample size : from chip to 4 inch wafers
  • File format : GDSII

ZEP 520A
Resist ZEP 520A

 

 

  

Top of page

Characterization

Microscopes

Characteristics

  • several AFM, STL, SNOM, ..

Scanning probe microscope enables to visualize samples at atomic scale.

MEB FEI

Scanning Electron Microscope environnemental FEI Quanta 450W and EDS EDAX APEX 2i
 

Goniometer

Contact angle measurement : Digidrop – MCAT goniometer (GBX)

 
Profilomètre Tencor Alpha Step IQ

Tencor Alpha-Step IQ surface profiler

  • accuracy: 0.1 %;
  • maximum scanning length: 10 mm from left to right and 2 mm from right to left;
  • scanning velocity: 2 to 200 µm/s;
  • lateral resolution: given by the diamond point (cone of 60° and 5 µm terminal radius), sample dimensions: 4 inch;
  • sample thickness: up to 17.5 mm;
  • contact force: adjustable from 1 to 100 mg;
  • gauge block: 6500 Å aluminium Tencor Instruments;

thickness measurements : measurable step height: some nm to 1 500 µm in 3 ranges: 0 – 20 µm, 0 - 400 µm, 0 - 2 000 µm;

roughness and waviness measurement : display of Ra, Rq, Rt, Wa, Wq et Wt parameters, cut-off filter: adjustable (generally 80 µm)

Fizeau Interferometer

Fizeau Interferometer (Zygo)

  • 1000x1000 pixels camera
  • Motorised zoom x1-x6
  • accuracy : <0.1 nm
Rugosimètre tridimensionnel

Tridimensionnal roughness meter

  • maximum tip moving: ±250µm;
  • tip angle: 25º;
  • measurement capacity: pieces whose height is included between 0 and 300mm;
  • maximum stroke: 56mm;
  • accuracy: 0.10µm.
Ellipsomètre

Spectroscopic ellipsometer

  • spectral measurement range: 260 << 2100 nm;
  • spot size: 50, 100 and 1000 m;
  • Xe source 75 W;
  • analysis system fitted with a thermally stabilized photoelastic modulator set on an automatic rotary stage (modulation frequency : 50 kHz)
  • ; HR460 high resolution double output monochromator with near-infrared extension (typical resolution: 0.1 nm); 2 detectors: a photomultiplicator and an InGaAs detector;
  • sample holder: 6 inch diameter with an adjustment system (in rotation...);
  • manual height adjustment, maximum thickness: 20 mm;
  • automatic goniometer: adjustable from 40 up to 90 degrees by steps of 0.05 degree (accuracy: 0.01 degree), auto-collimating eye piece;
  • thickness and index extraction softwares: DeltaPsi2 (version 2.0);
  • possibility of transmission measurements
Système d'analyse XPS

XPS analysis system (Thermo VG)

The XPS device is composed of:

  • X-ray source 45° tilted relatively to the surface;
  • multisample introduction lock;
  • analysis chamber where the target is irradiated;
  • detection and analysis system oriented perpendicularly to the surface;
  • a manipulator system (4 axis, /- 12.5mm Z=50 mm) with heating element (750°C ) (temperature studies possible).
  • The device set permanently works with a vacuum of 10-10 Torr.
NanojuraNon-contact dimensional surface characterisation (Nanojura) 

FSM 500 TCFSM 500 TC
Stress measurement as function of temperature up to 500°C

  • Stress range: 1 x 107 to 4 x 1010 dynes/cm2 (Provided that the wafer curvature change before and after processing is greater than 1micron (bow height) for a 170mm scan line)
  • Wafer sizes: 200mm or smaller
  • Scan range: Up to 170mm
  • Scan line: Single scan line at any wafer orientation
  • Mapping: Multi scan line mapping by manually rotating wafers. Max of 6 line mapping with 30 deg between each line
  • Repeatability: 1.0% (1 sigma) of average value using 5000A W wafer, measured 30X. (Ambient temperature)
  • Results Report: Film Stress, Radius, Wafer bow Height, Temperature, Date and Time
  • Laser type: Dual wavelength, 780nm and 650nm laser diodes

MSA-500

MSA-500
Micro System Analyser

Measuring 3D-Dynamics and Topography of MEMS and Microstructures

Top of page

Connector and packaging

Wafer bonding EVGBall bondingNanoprep NP12

Wafer Bonding EVG

TPT 16 - Semi Automatic Wire Bonder

Nanoprep NP12: surface plasma activation

   

CL200 cleaner bonder

CL200 Cleaner Bonder
and IR200 Inspection module

Circular saw

DISCO DAD 321

DISCO DAD 3350

DISCO DAD 3350

PolisherFlip-Chip

Chemical mechanical polisher: Alpsitec E460

Polisher LogitechFlip-Chip FC250

Top of page